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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200101 Issued Date : 2001.07.01 Revised Date : 2002.03.27 Page No. : 1/4
HBT136AE
TRIAC
Description
Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.
TO-220AB
Quick Reference Data
Symbol VDRM IT(RMS) ITSM Parameter Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current Max. 600 4 25 Unit V A A
Pin Configuration
Pin 1 2 3 tab Description Main terminal 1 Main terminal 2 Gate Main terminal 2
tab 123 G
Symbol
T2 T1
Limtiing Values
Symbol VDRM IT(RMS) ITSM I2t Parameter Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering T2+ G+ T2+ GT2- GT2- G+ Peak gate current Peak gate voltage Peak gate power Average gate power Storage Temperature Range Operating junction temperature Min. Max. 600 4 25 3.1 50 50 50 10 2 5 5 0.5 150 125 Units V A A A2S A/us A/us A/us A/us A V W W C C
dIT/dt
IGM VGM PGM PG(AV) Tstg Tj
HBT136AE
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Static Characteristics (Ta=25C)
Symbol Parameter Conditions VD=12V, IG=0.1A, T2+ G+ VD=12V, IG=0.1A, T2+ GVD=12V, IG=0.1A, T2- GVD=12V, IG=0.1A, T2- G+ VD=12V, IGT=0.1A, T2+ G+ VD=12V, IGT=0.1A, T2+ GVD=12V, IGT=0.1A, T2- GVD=12V, IGT=0.1A, T2- G+ VD=12V, IGT=0.1A IT=5A VD=12V, IT=0.1A VD=VDRM
Spec. No. : HE200101 Issued Date : 2001.07.01 Revised Date : 2002.03.27 Page No. : 2/4
IGT
Gate Trigger Current
IL IH VT VGT ID
Latching Current Holding Current On-state Voltage Gate Trigger Voltage Off-state Leakage Current
HBT136AE Min. Typ. Max. 5 10 6 10 6 10 18 25 15 20 15 20 6 15 1.4 1.70 0.8 1.5 200
Unit mA mA mA mA mA mA mA mA mA V V uA
Static Characteristics
Symbol dVD/dt tgt Parameter Critical rate of rise of off-state voltage Gate controlled turnon time Conditions VDM=67% VDRM(max); Tj= 125C; exponential waveform; gate open circuit ITM=6A; VD=VDRM(max); IG=0.1A; dIG/dt=5A/us Min. Typ. 50 2 Max. Unit V/us us
Thermal Resistances
Symbol Rth j-mb Rth j-a Parameter Thermal resistance junction to mounting base Thermal resistance junction to ambient Conditions Full cycle Half cycle In free air Min. Typ. 60 Max. 3.0 3.7 Unit K/W K/W K/W
HBT136AE
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Normalised Gate Trigger Current IGT(Ta)/IGT(25 C), Versus Air Temperature Ta
1.1 1.0 0.9
o
Spec. No. : HE200101 Issued Date : 2001.07.01 Revised Date : 2002.03.27 Page No. : 3/4
Typical & Maximum On-State Characteristic
11 10 9 8 7
IGT/IGT(25 C)
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 20 40 60 T2+/G+ T2-/GT2+/GT2-/G+ 80 100 120 140
o
IT/A
6 5 4 3 2 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 typ 25C 125C
Ta( C)
o
VT/V
Normalised Gate Trigger Voltage VGT(Ta)/VGT(25 C), Versus Air Temperature Ta
1.6 3.0
o
Normalised Holding Current IH(Ta)/IH(25 C), Versus Air Temperature Ta
o
1.4
2.5
VGT/VGT(25 C)
1.2
2.0
o
IL/IL(25 C)
o
1.0
1.5
0.8
1.0
0.6 T2+/G+ 0.4 -50 0 50 100 150 T2-/G-
0.5
0.0 0 20 40 60
o
80
100
120
140
Ta( C)
o
Ta/( C)
Normalised Latching Current IL(Ta)/IL(25 C), Versus Air Temperature Ta
3 8 7 2.5 6 2
a
o
Maximum On-State Dissipation, Ptot Versus Rms On-State Current, a=Conduction Angle
a
IL/IL(25 C)
5
1.5
Ptot/w
o
4 3 2
1
0.5 1 a=90 0 0 25 50 75 100 125 150 0 0.0 1.0 2.0 3.0 4.0 5.0 a=120 a=180
Ta( C)
o
IT(RMS)/A
HBT136AE
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
A D B E C
Marking:
Spec. No. : HE200101 Issued Date : 2001.07.01 Revised Date : 2002.03.27 Page No. : 4/4
H BT 136AE Date Code Control Code
H I G Tab P M 3 2 1 O N K
Style: Pin 1. Main terminal 1 2. Main terminal 2 3. Gate Tab connected to main terminal 2
3-Lead TO-220AB Plastic Package HSMC Package Code: E *: Typical
DIM A B C D E G H
Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398
Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25
DIM I K M N O P
Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248
Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HBT136AE
HSMC Product Specification

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